switching diode 1ss400g ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) high speed switching ? features 1)ultra small mold type. vmd2 2)high reliability ? construction silicon epitaxial planer ? structure ? absolute maximum ratings (ta=25 ?c) symbol unit v rm v v r v i fm ma io ma isurge ma tj ?c tstg ?c ? electrical characteristics (ta=25 ?c) symbol min. typ. max. unit conditions forward voltage v f - - 1.2 v i f =100ma i r - - 100 na v r =80v c t - - 3.0 pf v r =0.5v f=1.0mhz trr - - 4.0 ns v r =6v i f =10ma r l 100? capacitance between terminal reverse recovery time storage temperature ? 55 to ? 150 parameter reverse current surge current (1s) 500 junction temperature 150 forward current (repetitive peak) 225 average rectified forward current 100 reverse voltage (repetitive peak) 90 reverse voltage (dc) 80 ? taping dimensions (unit : mm) parameter limits vmd2 rohm : vmd2 dot (year week factory) 0.5 1.2 0.5 0.130.03 0.50.05 0.270.03 0.60.05 1.00.05 1.40.05 0.760.1 40.1 40.1 20.05 1.5+0.1 0 3.50.05 1.750.1 8.00.3 0.1 0.180.05 0.650.05 0.5 0.4 20.05 0.3 1.110.05 2.10.1 1/4 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
1ss400g 0.1 1 10 100 1000 0 500 1000 1500 forward voltage v f (mv) v f - i f characteristics forward current:i f (ma) tj=125 c tj=25 c tj=150 c tj=75 c 1 10 100 1000 10000 100000 0 20 40 60 80 tj=125 c tj=25 c tj=150 c tj=75 c reverse current:i r (na) reverse voltage v r (v) v r - i r characteristics 0.1 1 10 0 5 10 15 20 25 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz tj=25 c 850 860 870 880 890 900 910 920 930 940 950 v f dispersion map forward voltage:v f (mv) ave:891.2mv tj=25 c i f =0.1a n=30pcs 1 10 100 reverse current:i r (na) i r dispersion map tj=25 c v r =80v n=30pcs ave:22.17na 0 0.2 0.4 0.6 0.8 1 ave:0.595pf ta=25 c f=1mhz v r =0.5v n=10pcs capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
1ss400g 0 2 4 6 8 10 12 14 16 18 20 ave:3.9a 8.3ms i fsm 1cyc i fsm dispersion map its ability of peak surge forward current:i fsm (a) 0 0.5 1 1.5 2 ave:1.49ns ta=25 c v r =6v i f =10ma r l =100 n=10pcs trr dispersion map reverse recovery time:trr(ns) 1 10 100 1 10 100 8.3ms i fsm 1cyc. 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 1 10 100 1 10 100 time i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 0 5 10 15 20 25 30 c=200pf r=0 c=100pf r=1.5k ave 1.60kv ave 6.48kv electrostatic discharge test esd(kv) esd dispersion map 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - a) rth(j - c) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 3/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
1ss400g 0 0.05 0.1 0.15 0.2 0 25 50 75 100 125 150 d.c. d=1/2 sin( 180) 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0 0.05 0.1 0.15 0.2 d.c. d=1/2 sin( 180) forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics 0 0.002 0.004 0.006 0 10 20 30 40 50 60 70 80 d.c. d=1/2 sin( 180) reverse power dissipation:p r (w) reverse voltage:v r (v) v r - p r characteristics average rectified forward current:io(a) case temperature:tc( c ) derating curve (io - tc) t tj=150 c d=t/t t v r io v r =40v 0a 0v 4/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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